Diodes DMG3413L User Manual download pdf

DMG3413L

Document number: DS35051 Rev. 4 - 2

1 of 6

www.diodes.com

September 2013

DMG3413L

NEW PRODUCT

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= +25°C

-20V

95mΩ @ V

= -4.5V

3.0A

130mΩ @ V

= -2.5V

2.5A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power Management Functions

 Analog Switch

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0072 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMG3413L-7 SOT23 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Internal Schematic

Pin Configuration

SOT23

G33 = Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Source

Gate

Drai

G33

Chengdu A/T Site

Shanghai A/T Site

G33

1 2 3 4 5 6

DMG3413L 1
NEW PRODUCT 3

Summary of Contents

Page 1 - DMG3413L

DMG3413L Document number: DS35051 Rev. 4 - 2 1 of 6 www.diodes.com September 2013© Diodes Incorporated DMG3413LNEW PRODUCT 20V P-CHANNEL ENHANCEM

Page 2

DMG3413L Document number: DS35051 Rev. 4 - 2 2 of 6 www.diodes.com September 2013© Diodes Incorporated DMG3413LNEW PRODUCT Maximum Ratings (@T

Page 3 - NEW PRODUCT

DMG3413L Document number: DS35051 Rev. 4 - 2 3 of 6 www.diodes.com September 2013© Diodes Incorporated DMG3413LNEW PRODUCT 024681012-I , DRAIN

Page 4

DMG3413L Document number: DS35051 Rev. 4 - 2 4 of 6 www.diodes.com September 2013© Diodes Incorporated DMG3413LNEW PRODUCT V , GATE THRESHOLD

Page 5

DMG3413L Document number: DS35051 Rev. 4 - 2 5 of 6 www.diodes.com September 2013© Diodes Incorporated DMG3413LNEW PRODUCT 0.00001 0.0001 0.00

Page 6

DMG3413L Document number: DS35051 Rev. 4 - 2 6 of 6 www.diodes.com September 2013© Diodes Incorporated DMG3413LNEW PRODUCT IMPORTANT NOTICE

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