Diodes DMP2004K User Manual

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DMP2004K
Document number: DS30933 Rev. 7 - 2
1 of 5
www.diodes.com
July 2012
© Diodes Incorporated
DMP2004
K
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) max
Package
I
D
T
A
= +25°C
-20V
0.9Ω @ V
GS
= -4.5V
SOT23
-430mA
2.0Ω @ V
GS
= -1.8V
-150mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Features
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
<1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMP2004K-7 Commercial SOT23 3,000/Tape & Reel
DMP2004KQ-7 Automotive SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
e3
Top View
Internal Schematic
Top View
Equivalent Circuit
ESD PROTECTED
Source
Gate
Protection
Diode
Gate
Drain
D
G
S
SOT23
PAB = Product Type Marking Code
YW = Date Code Marking
Y = Year (ex: W = 2009)
W = Week (ex: A ~ Z = Weeks 1 ~ 26
a ~ y = Weeks 27 ~ 51
z = Weeks 52 and 53
)
PAB
YW
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Summary of Contents

Page 1 - DMP2004K

DMP2004K Document number: DS30933 Rev. 7 - 2 1 of 5 www.diodes.com July 2012© Diodes Incorporated DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Pro

Page 2

DMP2004K Document number: DS30933 Rev. 7 - 2 2 of 5 www.diodes.com July 2012© Diodes Incorporated DMP2004K Maximum Ratings (@TA = +25°C, unles

Page 3 - -I , DRAIN-SOURCE CURRENT (A)

DMP2004K Document number: DS30933 Rev. 7 - 2 3 of 5 www.diodes.com July 2012© Diodes Incorporated DMP2004K 00-V , DRAIN-SOURCE VOLTAGE (V)Figur

Page 4 - -V , SOURCE-DRAIN VOLTAGE (V)

DMP2004K Document number: DS30933 Rev. 7 - 2 4 of 5 www.diodes.com July 2012© Diodes Incorporated DMP2004K T , AMBIENT TEMPERATURE (°C)Figure 7

Page 5 - © Diodes Incorporated

DMP2004K Document number: DS30933 Rev. 7 - 2 5 of 5 www.diodes.com July 2012© Diodes Incorporated DMP2004K Suggested Pad Layout

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