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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 OCTOBER 1995 ✪

PARTMARKING DETAIL  EK

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Emitter Voltage V

CES

125 V

Collector-Emitter Voltage V

CEO

125 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

Continuous Collector Current I

800 mA

Base Current I

100 mA

Power Dissipation at T

amb

=25°C P

TOT

330 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Cut-Off

Current

CES

100

µA

=100V

=100V, T

amb

=150°C

Collector Cut-Off

Current

CEX

µA

=100V,V

=0.2V,T

amb

=85°C

=100V,V

=0.2V,

amb

=125°C

Emitter Cut-Off

Current

EBO

100 nA V

=4V

Collector-Emitter

Saturation Voltage

CE(sat)

0.9 V I

=300mA, I

=30mA *

Base-Emitter

Saturation Voltage

BE(sat)

1.4 V I

=300mA, I

=30mA *

Static Forward

Current Transfer Ratio

=100µA, V

=1V

=100mA, V

=1V *

=200mA, V

=1V *

Transition Frequency f

100 MHz I

=10mA, V

=5V

f =20MHz

Output Capacitance C

obo

12 pF V

=10V, I

=0, f =1MHz

* Measured under pulsed conditions. Pulse width = 300

µs. Duty cycle 2%

BCX41

3 - 33

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SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 OCTOBER 1995 ✪PARTMARKING DETAIL  EKABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCol

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