Diodes DCX4710H User Manual download pdf

DCX4710H

100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

General Description

DS30871 Rev. 6 - 2 1 of 7

www.diodes.com

DCX4710H

• DCX4710H is best suited for applications where the load

needs to be turned on and off using micro-controllers,

comparators or other control circuits, particularly at a point of

load. It features a discrete pre-biased PNP transistor which

can support continuous maximum current of 100 mA. It also

contains a pre-biased NPN transistor which can be used as a

control and can be biased using a higher supply. The

component devices can be used as a part of circuit or as

stand alone discrete devices.

Features

• Built in Biasing Resistors

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic. "Green Molding" Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Fig. 2

• Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking & Type Code Information: See Page 7

• Ordering Information: See Page 7

• Weight: 0.005 grams (approximate)

SOT-563

Schematic and Pin Configuration

Reference

Device Type

R1 (NOM) R2 (NOM) R3 (NOM) R4 (NOM)

Q1 PNP

10KΩ 47KΩ

⎯ ⎯

Q2 NPN

⎯ ⎯

10KΩ 10KΩ

Maximum Ratings: Total Device @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Output Current

out

100 mA

Power Dissipation (Note 3)

150 mW

Power Derating Factor above 45°C

der

1.43 mW/°C

Junction Operation and Storage Temperature Range

-55 to +150 °C

Thermal Resistance, Junction to Ambient Air (Note 3)

(Equivalent to one heated junction of PNP transistor) @ T

= 25°C

θJA

833 °C/W

Notes: 1. No purposefully added lead.

2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

1 2 3 4 5 6 7

Summary of Contents

Page 1

DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description 123 4 5 6 DS30871 Rev. 6 - 2 1 of 7 www.diodes.com DCX4

DS30871 Rev. 6 - 2 2 of 7 www.diodes.com DCX4710H © Diodes Incorporated Sub-Component Device – Pre-Biased PNP Transistor (Q1) @TA = 25°C unle

Page 3 - Typical Characteristics @T

Pre-Biased NPN Transistor (Q2) @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERI

Page 4

Characteristics Curves of PNP Transistor (Q1) @Tamb = 25°C unless otherwise specified I , COLLECTOR CURRENT (A)CV , COLLECTOR EMITTER VOLTAGE (

Page 5 - I , OUTPUT CURRENT (mA)

I , OUTPUT CURRENT (mA)CFig. 6 Input Voltage vs. Collector CurrentT = -55CA°T = 150 CA°T = 125 CA°T = 25CA°T = 85CA° Characteristics Curves of

Page 6

10V, COLLECTOR EMITTER SATURATION VOLTAGE (V)CE(SAT)I , COLLECTOR CURRENT (mA)ICCFig. 9 vs. VCE(SAT)0.11100 1000T = 150 CA°T = -55

Page 7

Ordering Information (Note 5) DS30871 Rev. 6 - 2 7 of 7 www.diodes.com DCX4710H © Diodes Incorporated C02YMDevice Marking Code Packagin

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