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Diodes BC856A-BC858C User Manual Page 4

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BC856A – BC858C
Document Number: DS11207 Rev. 23 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
BC856A-BC858C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BC856
BV
CBO
-80
— — V
I
C
= -10µA
BC857 -50
BC858 -30
Collector-Emitter Breakdown Voltage
(Note 10)
BC856
BV
CEO
-65
— — V
I
C
= -10mA
BC857 -45
BC858 -30
Emitter-Base Breakdown Voltage
BV
EBO
-5 — — V
I
E
= -1µA
Collector Cutoff Current
I
CBO
— —
-15 nA
V
CB
= -30V
-4 µA
V
CB
= -30V, T
J
= +150°C
Collector Emitter Cutoff Current
BC856
I
CES
— —
-15
nA
V
CE
= -80V
BC857 -15
V
CE
= -50V
BC858 -15
V
CE
= -30V
Emitter-Base Cutoff Current
I
EBO
— — -100 nA
V
EB
= -5V
Small Signal Current Gain
(Note 10)
BC856A / BC857A / BC858A
h
fe
—
200
— —
I
C
= -2.0mA, V
CE
= -5V
f = 1.0kHz
BC856B / BC857B / BC858B 330
BC857C / BC858C 600
Input Impedance (Note 10)
BC856A / BC857A / BC858A
h
ie
—
2.7
— kΩ
BC856B / BC857B / BC858B 4.5
BC857C / BC858C 8.7
Output Admittance
(Note 10)
BC856A / BC857A / BC858A
h
oe
—
18
— µS
BC856B / BC857B / BC858B 30
BC857C / BC858C 60
Reverse Voltage Transfer
Ratio (Note 10)
BC856A / BC857A / BC858A
h
re
—
1.5x10
-
4
— — BC856B / BC857B / BC858B 2x10
-
4
BC857C / BC858C 3x10
-
4
DC Current Gain (Note 10)
BC856A / BC857A / BC858A
h
FE
125 180 250
—
I
C
= -2.0mA, V
CE
= -5V
BC856B / BC857B / BC858B 220 290 475
BC857C / BC858C 420 520 800
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
-75 -300
mV
I
C
= - 10mA, I
B
= -0.5mA
-250 -650
I
C
= - 100mA, I
B
= -5.0mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
-600 -650 -750
mV
I
C
= -2mA, V
CE
= -5V
— — -820
I
C
= -10mA, V
CE
= -5V
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
—
-700
— mV
I
C
= -10mA, I
B
= -0.5mA
-850
I
C
= -100mA, I
B
= -5mA
Output Capacitance
C
obo
— 3 — pF
V
CB
= -10V, f = 1.0MHz
Transition Frequency
f
T
100 200 — MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Noise Figure NF — 2 10 dB
V
CE
= -5V, I
C
= -200µA
R
S
= 2kΩ, f = 1kHz
∆f = 200Hz
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
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