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Diodes BC847BS User Manual Page 2

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BC847BS
Document number: DS30222 Rev. 13 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated
BC847BS
Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
100 mA
Peak Collector Current
I
CM
200 mA
Peak Base Current
I
BM
200 mA
Thermal Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50 — — V
I
C
= 100A, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
45 — — V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6 — — V
I
E
= 100A, I
C
= 0
DC Current Gain
h
FE
200 — 450 —
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
— —
100
400
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE
(
sat
)
— 755 — mV
I
C
= 10mA, I
B
= 0.5mA
Base-Emitter Voltage
V
BE
(
on
)
580 665 700 mV
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Cutoff Current
I
CBO
—
—
—
—
20
5.0
nA
µA
V
CB
= 40V
V
CB
= 40V, T
A
= +125°C
Emitter-Cutoff Current
I
EBO
— — 100 nA
V
EB
= 5.0V, I
C
= 0
Gain Bandwidth Product
f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
— 2.0 3.0 pF
V
CB
= 10V, f = 1.0MHz
Emitter-Base Capacitance
C
EBO
— 11 — pF
V
EB
= 0.5V, f = 1.0MHz
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
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