Diodes 1N4448WS User Manual download pdf (Page 2)

1N4448WS

Document number: DS30096 Rev. 13 - 2

2 of 4

www.diodes.com

September 2013

1N4448WS

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 4)

(BR)R



= 2.5µA

Forward Voltage

0.62



0.72

0.855

1.0

1.25

= 5.0mA

= 10mA

= 100mA

= 150mA

Peak Reverse Current (Note 4)



2.5

µA

= 75V

= 75V, T

= +150°C

= 25V, T

= +150°C

= 20V

Total Capacitance



4.0 pF

= 0, f = 1.0MHz

Reverse Recovery Time



4.0 ns

= I

= 10mA,

= 0.1 x I

, R

= 100Ω

Notes: 4. Short duration pulse test used to minimize self-heating.

5. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

100

300

025

75 100 125 150

DISSI

N (mW)

T , AMBIENT TEMPERATURE ( C)

Figure 1 Forward Current Derating Curve

200

Note 5

0.1

100

1000

0 200 400 600 800 1000 1200 1400 1600

Fig. 2 Typical Forward Characteristics

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

I , INSTANTANEOUS FORWARD CURRENT (mA)

T = 85°C

T = 125°C

T = 150°C

T = -55°C

T = 25°C

0.10

1.0

10.0

0.01

0.001

40 60 80

V , INSTANTANEOUS REVERSE VOLTAGE (V)

Figure 3 Typical Reverse Characteristics

T = 100C

T = 0C

T = 75C

T = 50C

T = 25C

T = -30C

I , INSTANTANEOUS REVERSE CURRENT( A)



V , DC REVERSE VOLTAGE (V)

Figure 4 Total Capacitance vs. Reverse Voltage

E (pF)

f = 1MHz

1 2 3 4

1N4448WS 1

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