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Diodes ZXTP2012G User Manual

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1
SEMICONDUCTORS
SUMMARY
BV
CEO
= -60V : R
SAT
= 39m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
Extremely low equivalent on-resistance; R
SAT
= 39mV at 5A
•
5.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
•
Excellent gain characteristics specified up to 10 Amps
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
DEVICE MARKING
ZXTP
2012
ZXTP2012G
ISSUE 1 - JUNE 2005
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTP2012GTA 7” 12mm
embossed
1,000 units
ZXTP2012GTC 13” 4,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
S
O
T
2
2
3
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1 2 3 4 5 6

Summary of Contents

Page 1 - ZXTP2012G

1SEMICONDUCTORSSUMMARYBVCEO= -60V : RSAT= 39m ; IC= -5.5ADESCRIPTIONPackaged in the SOT223 outline this new low saturation 60V PNP transistoroffers ex

Page 2

ZXTP2012GSEMICONDUCTORSISSUE 1 - JUNE 20052PARAMETER SYMBOL VALUE UNITJunction to ambient(a)R⍜JA42 °C/WNOTES(a) For a device surface mounted on 52mm x

Page 3

ZXTP2012GSEMICONDUCTORSISSUE 1 - JUNE 20053CHARACTERISTICS

Page 4

ZXTP2012GSEMICONDUCTORSISSUE 1 - JUNE 20054PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSCollector-base breakdown voltage BVCBO-100 -120 V IC=-100␮AC

Page 5

ZXTP2012GSEMICONDUCTORSISSUE 1 - JUNE 20055TYPICAL CHARACTERISTICS

Page 6

ZXTP2012GSEMICONDUCTORS6ISSUE 1 - JUNE 2005EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 4

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