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Diodes ZXTN2007G User Manual

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1
SEMICONDUCTORS
SUMMARY
BV
CEO
= 30V : R
SAT
= 28m ; I
C
= 7A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
Extemely low equivalent on-resistance; R
SAT
= 28m at 6.5A
•
7 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
DEVICE MARKING
ZXTN
2007
ZXTN2007G
ISSUE 2 - MAY 2006
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTN2007GTA 7”
12mm
embossed
1,000 units
ZXTN2007GTC 13" 4,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
S
O
T
2
2
3
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1 2 3 4 5 6

Summary of Contents

Page 1 - ZXTN2007G

1SEMICONDUCTORSSUMMARYBVCEO= 30V : RSAT= 28m ; IC= 7ADESCRIPTIONPackaged in the SOT223 outline this new low saturation 30V NPN transistoroffers extrem

Page 2

ZXTN2007GSEMICONDUCTORSISSUE 2 - MAY 20062PARAMETER SYMBOL VALUE UNITJunction to ambient(a)R⍜JA42 °C/WJunction to ambient(b)R⍜JA78 °C/WNOTES(a) For a

Page 3

ZXTN2007GSEMICONDUCTORSISSUE 2 - MAY 20063CHARACTERISTICS

Page 4

ZXTN2007GSEMICONDUCTORSISSUE 2 - MAY 20064PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSCollector-base breakdown voltage BVCBO80 125 V IC=100␮ACollec

Page 5

ZXTN2007GSEMICONDUCTORSISSUE 2 - MAY 20065TYPICAL CHARACTERISTICS

Page 6

ZXTN2007GSEMICONDUCTORS6ISSUE 2 - MAY 2006EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49

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