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Diodes ZXMD63P02X User Manual

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SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.27V; I
D
=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXMD63P02XTA 7 12mm embossed 1000 units
ZXMD63P02XTC 13 12mm embossed 4000 units
DEVICE MARKING
• ZXM63P02
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXMD63P02X
1
ISSUE 1 - JUNE 2004
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Summary of Contents

Page 1 - ZXMD63P02X

Top ViewSUMMARYV(BR)DSS=-20V; RDS(ON)=0.27V; ID=-1.7ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that

Page 2

ZXMD63P02X2THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a)(d) RθJA143 °C/WJunction to Ambient (b)(d) RθJA100 °C/WJunction to Ambi

Page 3

0.1 10 1000.0001 0.1 1000 80 160VDS- Drain-Source Voltage (V)Safe Operating Area0.110100ID - Drain Current (A)DC1s100msD=0.1D=0.2Thermal Resistance (°

Page 4

ZXMD63P02X4ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.STATICDrain-Source Bre

Page 5

0.1 10012.540.1 10 0.2 0.8 1.420050-1000.1 10 100-VDS - Drain-Source Voltage (V)Output Characteristics0.1-ID- Drain Current (A)VDS=-10V-ID- Drain Curr

Page 6

TYPICAL CHARACTERISTICSBasic Gate Charge WaveformGate Charge Test CircuitSwitching Time Waveforms Switching Time Test Circuit0.1 10 100 0 4 4.5-VDS -

Page 7

ZXMD63P02XHEDe X 6AA1LC12345678θ°BConforms to JEDEC MO-187 Iss APACKAGE DIMENSIONSDIM Millimetres InchesMIN MAX MIN MAXA 1.10 0.043A1 0.05 0.15 0.002

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