Diodes ZXMC3F31DN8 User Manual

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Issue 1 - September 2008 1
© Diodes Incorporated 2008
www.zetex.com
www.diodes.com
ZXMC3F31DN8
30V SO8 Complementary dual enhancement mode
MOSFET
Summary
Device
V
(BR)DSS
(V)
Q
G
(nC)
R
DS(on)
(Ω)
I
D
(A)
0.024 @ V
GS
= 10V 7.3
Q1 30 12.9
0.039 @ V
GS
= 4.5V 5.7
0.045 @ V
GS
= -10V 5.3
Q2 -30 12.7
0.080 @ V
GS
= -4.5V 4
Description
This new generation Trench MOSFET from Zetex has been designed to
minimize the on-state resistance (R
DS(on)
) and yet maintain superior
switching performance making it ideal for power management and
battery charging functions.
Features
Low on-resistance
4.5V gate drive capability
Low profile SOIC package
Applications
DC-DC Converters
SMPS
Load switching switches
Motor control
Backlighting
Ordering information
Device marking
ZXMC
3F31
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMC3F31DN8TA 7 12 500
D2
S2
G2
D1
Q1 N-Channel Q2 P-Channel
S1
G1
D1S1
G1
S2
G2
Top view
N
P
D1
D2
D2
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1 2 3 4 5 6 ... 10 11

Summary of Contents

Page 1 - ZXMC3F31DN8

Issue 1 - September 2008 1 © Diodes Incorporated 2008

Page 2

ZXMC3F31DN8 Package outline SO8 SO8 Package Information Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. DIM Min. Max. Min

Page 3

ZXMC3F31DN8 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditio

Page 4

ZXMC3F31DN8 Absolute maximum ratings Parameter Symbol N-channel Q1 P-channel Q2 Unit Dra

Page 5

ZXMC3F31DN8 Thermal characteristics 0.1 1 1010m100m1100 25 50 75 100 125 1500.00.51.01.52.0100µ 1m 10m 100m 1 10 100 1k020406080100100µ 1m 1

Page 6

ZXMC3F31DN8 Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions St

Page 7

ZXMC3F31DN8 Q1 Typical characteristics 0.1 1 100.010.11100.1 1 100.010.11102340.1110-50 0 50 100 1500.40.60.81.01.21.41.60.01 0.1 1 100.010.11101

Page 8

ZXMC3F31DN8 Q1 Typical characteristics –cntd. 1100100200300400500600700800900CRSSCOSSCISSVGS = 0Vf = 1MHzC Capacitance (pF)VDS - Drain - Source

Page 9 - Test circuits

ZXMC3F31DN8 Q2 P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Sta

Page 10 - SO8 Package Information

ZXMC3F31DN8 Typical characteristics 0.1 1 100.010.11100.1 1 100.11102.0 2.5 3.0 3.50.1110-50 0 50 100 1500.40.60.81.01.21.41.60.01 0.1 1 100.010

Page 11

ZXMC3F31DN8 Typical characteristics 11002004006008001000CRSSCOSSCISSVGS = 0Vf = 1MHzC Capacitance (pF)-VDS - Drain - Source Voltage (V)0 5 10 1

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