Diodes ZTX1149A User Manual download pdf (Page 1)

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - January 1997

FEATURES

CEO

= - 25V

* 3 Amp Continuous Current

* 10 Amp Pulse Current

* Low Saturation Voltage

* High Gain

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX1149A UNIT

Collector-Base Voltage V

CBO

-30 V

Collector-Emitter Voltage V

CEO

-25 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

-10 A

Continuous Collector Current I

-3 A

Base Current I

-500 mA

Power Dissipation at T

amb

=25°C P

tot

Operating and Storage Temperature

Range

stg

-55 to +200 °C

ZTX1149A

E-Line

TO92 Compatible

1 2 3 4

ZTX1149A 1

Summary of Contents

Page 1 - ZTX1149A

PNP SILICON PLANAR MEDIUM POWERHIGH GAIN TRANSISTORISSUE 1 - January 1997FEATURES*VCEO = - 25V* 3 Amp Continuous Current* 10 Amp Pulse Current* Low Sa

Page 2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL UNIT CONDITIONS.MIN. TYP. MAX.Collector-BaseBreakdown VoltageV(BR

Page 3

1m 1001m 1001m 100 100m 1001001m1m 100IC- Collector Current (A)VCE(sat)v IC01.0VCE(sat)- (V)IC/IB=10IC/IB=50IC/IB=100+25°C-55°ChFE - Typical Gain750+1

Page 4

ZTX1149ATransient Thermal ResistancePulse Width0.1msTransiant Thermal Resistance ( C/W)20601001401801ms 10ms 100ms 10s 100s1s16012080400D=1(D.C)D=0.2D

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