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Diodes ZDT1048 User Manual

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Issue 2 - December 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZDT1048
SM-8 Dual NPN medium power high gain transistors
Summary
BV
CEO
> 17.5V
I
C(cont)
= 5A
V
CE(sat)
< 75mV @ 1A
P
D
= 2.75W
Description
Advanced process capability has been used to achieve
this high performance device. Combining two NPN
transistors in the SM-8 package provides a compact
solution for the intended applications.
Features
• Dual NPN device
• Very low saturation voltage
•High gain
• SM 8 package
Applications
• CCFL invertors
• Royer circuits
Ordering information
Device marking
T1048
DEVICE Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZDT1048TA 7 12 1000
C1
E1
B1
C2
E2
B2
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1 2 3 4 5 6

Summary of Contents

Page 1

Issue 2 - December 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZDT1048SM-8 Dual NPN medium power high gain transistorsSummaryBVCEO > 17.5VIC

Page 2 - Thermal Characteristics

ZDT1048Issue 2 - December 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsThermal Characteristics* The power which can be d

Page 3

ZDT1048Issue 2 - December 2007 3 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated). Para

Page 4 - Typical characteristics

ZDT1048Issue 2 - December 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristics

Page 5 - Package outline - SM8

ZDT1048Issue 2 - December 2007 5 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SM8Note: Controlling dimensions are in millimeters. App

Page 6

ZDT1048Issue 2 - December 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-81541 M

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