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Diodes MMBT6427 User Manual

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MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Terminal Connections: See Diagram
• Marking (See Page 3): K1D
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
A
C
B
E
J
L
TOP VIEW
M
B
C
H
G
D
K
E
E
B
C
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
12 V
Collector Current - Continuous
I
C
500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2) @ T
A
= 25°C P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 2)@ T
A
= 25°C
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
40
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
12
⎯
V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50 nA
V
CB
= 30V, I
E
= 0
Collector Cutoff Current
I
CEO
⎯
1.0
μA
V
CE
= 25V, I
B
= 0
Emitter Cutoff Current
I
EBO
⎯
50 nA
V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
10,000
20,000
14,000
100,000
200,000
140,000
⎯
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
1.2
1.5
V
I
C
= 50mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
2.0 V
I
C
= 500mA, I
B
= 0.5mA
Base-Emitter On Voltage
V
BE(ON)
⎯
1.75 V
I
C
= 50mA, V
CE
=5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0 Typical pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
15 Typical pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30048 Rev. 9 - 2 1 of 3
www.diodes.com
MMBT6427
© Diodes Incorporated
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1 2 3

Summary of Contents

Page 1 - MMBT6427

MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching •

Page 2 - © Diodes Incorporated

05010025 5075100 125150175200P , POWER DISSIPATION (mW)DT , AMBIENT TEMPERATURE (°C)Fig. 1, Max Power Dissipation vs Ambient TemperatureA15020025

Page 3

Ordering Information (Note 5) DS30048 Rev. 9 - 2 3 of 3 www.diodes.com MMBT6427 © Diodes Incorporated Device Packaging Shipping SOT-23 3

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