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Diodes FMMTA92 User Manual

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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - MARCH 2001 ✪
PARTMARKING DETAILS: – FMMTA92 - 4E
– FMMTA92R - 8E
COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA92 UNIT
Collector-Base Voltage V
CBO
-300 V
Collector-Emitter Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-200 mA
Power Dissipation at T
amb
= 25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMTA92
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300 V
I
C
=-100µA, I
E
=0
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-300 V I
C
=-1mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V
I
E
=-100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
µA
µA
V
CB
=-200V, I
E
=0
V
CB
=-160V, I
E
=0-
Emitter Cut-Off Current I
EBO
-0.1
µA
V
EB
=-3V, I
E
=0
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.5 V I
C
=-20mA, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 V I
C
=-20mA, I
B
=-2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=10V*
I
C
=-10mA, V
CE
=10V*
I
C
=-30mA,V
CE
=-10V*
Transition Frequency f
T
50 MHz I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance C
obo
6pFV
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
FMMTA92
C
B
E
SOT23
TBA
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Summary of Contents

Page 1 - HIGH VOLTAGE TRANSISTOR

SOT23 PNP SILICON PLANARHIGH VOLTAGE TRANSISTORISSUE 4 - MARCH 2001 ✪PARTMARKING DETAILS: – FMMTA92 - 4E– FMMTA92R - 8ECOMPLEMENTARY TYPES: – FMM

Page 2 - TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICShFEStatic Forward Current Transfer Ratio 50 400.110100601.0 VCE=10V fTTransition Frequency (MHz) 110 300.1101001.0 5

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