Diodes FMMTA14 User Manual
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SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 4 - DECEMBER 1996
COMPLEMENTARY TYPES - FMMTA12 NONE
FMMTA13 FMMTA63
FMMTA14 FMMTA64
PARTMARKING DETAILS FMMTA12 3W
FMMTA13 1M
FMMTA14 1N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA12 FMMTA13/14 UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
40 V
Collector-Emitter Voltage V
CES
20 40 V
Emitter-Base Voltage V
EBO
10 V
Continuous Collector Current I
C
300 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter FMMTA12
Breakdown Voltage FMMTA13/14
V
(BR)CES
20
40
V
V
I
C
=100µA, I
B
=0*
I
C
=100µA, I
B
=0*
Collector Cut-Off FMMTA12
Current
I
CES
100 nA V
CB
=15V, V
BE
=0
Collector Cut-Off FMMTA12
Current FMMTA13/14
I
CBO
100
100
nA
nA
V
CB
=15V, I
E
=0
V
CB
=30V, I
E
=0
Emitter Cut-Off Current I
EBO
100 nA V
EB
=10V, I
C
=0
Static Forward FMMTA12
Current Transfer FMMTA13
Ratio FMMTA13
FMMTA14
FMMTA14
h
FE
20K
5K
10K
10K
20K
I
C
=10mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Collector-Emitter FMMTA12
Saturation Voltage FMMTA13/14
V
CE(sat)
1.0
0.9
V
V
I
C
=10mA, I
B
=0.01mA
I
C
=100mA, I
B
=0.1mA
Base-Emitter FMMTA12
On Voltage FMMTA13/14
V
BE(on)
1.4
2.0
V
V
I
C
=10mA, V
CE
=5V*
I
C
=100mA,V
CE
=5V*
*Measured under pulsed conditions. Pulse width =300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
For typical graphs see FMMT38A datasheet
FMMTA12
FMMTA13
FMMTA14
C
B
E
FMMTA12 Not Recommended for New
Design Please Use FMMTA14
1
Summary of Contents
Page 1 - DARLINGTON TRANSISTORS
SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORSISSUE 4 - DECEMBER 1996COMPLEMENTARY TYPES - FMMTA12 NONEFMMTA13 FMMTA63FMMTA14 FMMTA64PARTMAR
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