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Diodes FCX589 User Manual Page 1

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SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
PARTMARKING DETAIL – P89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Base Current I
B
-200 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
-50 V
I
C
=-100µA
V
(BR)CEO
-30 V I
C
=-10mA*
V
(BR)EBO
-5 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-30V
Collector -Emitter Cut-Off
Current
I
CES
-100 nA V
CES
=-30V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35
-0.65
VI
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.2 V I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1.1 V I
C
=-1A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
40
300
I
C
=-1mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency f
T
100 MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT549 datasheet
FCX589
C
B
C
E
3 - 91
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Summary of Contents

Page 1 - = 25°C)

SOT89 PNP SILICON PLANAR MEDIUMPOWER HIGH PERFORMANCE TRANSISTORISSUE 3 - OCTOBER 1995 ✪PARTMARKING DETAIL – P89ABSOLUTE MAXIMUM RATINGS.PARAMETER SY

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