Diodes DZT5401 User Manual download pdf

DS31218 Rev. 2 – 2

1 of 4

www.diodes.com

DZT5401

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementar

y NPN Type Available (DZT5551)

• Ideally

Suited for Automated Assembly Processes

• Ideal for Medium

Power Switching or Amplification Applications

• Lead Free

By Design/RoHS Compliant (Note 1)

• "Gree

n" Device (Note 3)

Mechanical Data

• Case: SOT-223

• Case Material:

Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity

: Level 1 per J-STD-020C

• Terminals: Finish - Matte Tin a

nnealed over Copper Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Conn

ections: See Diagram

• Marking & T

ype Code Information: See Page 3

• Orde

ring Information: See Page 3

• Weight: 0.112 gr

ams (approximate)

NEW PRODUCT

SOT-223

2,4

BASE

COLLECTOR

EMITTE

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-160 V

Collector-Emitter Voltage

CEO

-150 V

Emitter-Base Voltage

EBO

-5.0 V

Collector Current

-600 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @T

= 25°C (Note 3) P

1 W

Thermal Resistance, Junction to Ambient @T

= 25°C (Note 3)

125

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

(BR)CBO

-160

⎯

= -100μA, I

= 0

Collector-Emitter Breakdown Voltage

(BR)CEO

-150

⎯

= -1.0mA, I

= 0

Emitter-Base Breakdown Voltage

(BR)EBO

-5.0

⎯

= -10μA, I

= 0

Collector Cutoff Current

CBO

⎯

-50

μA

= -120V, I

= 0

= -120V, I

= 0, T

= 150°C

Emitter Cutoff Current

EBO

⎯

-50 nA

= -3.0V, I

= 0

ON CHARACTERISTICS (Note 4)

DC Current Gain

⎯

240

⎯

= -1.0mA, V

= -5.0V

= -10mA, V

= -5.0V

= -50mA, V

= -5.0V

Collector-Emitter Saturation Voltage

CE(SAT)

⎯

-0.2

-0.5

= -10mA, I

= -1.0mA

= -50mA, I

= -5.0mA

Base-Emitter Saturation Voltage

BE(SAT)

⎯

-1.0 V

= -10mA, I

= -1.0mA

= -50mA, I

= -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

obo

⎯

6.0 pF

= -10V, f = 1.0MHz, I

= 0

Small Signal Current Gain

40 200

⎯ V

= -10V, I

= -1.0mA, f = 1.0kHz

Current Gain-Bandwidth Product

100 300 MHz

= -10V, I

= -10mA, f = 100MHz

Noise Figure NF

⎯

8.0 dB

= -5.0V, I

= -200μA, R

= 10Ω,

f = 1.0kHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, pad layout as shown on page 4

or in Diodes Inc. suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/data

sheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2

1 2 3 4

Summary of Contents

Page 1 - DZT5401

DS31218 Rev. 2 – 2 1 of 4 www.diodes.com DZT5401 © Diodes Incorporated DZT5401 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Cons

Page 2 - NEW PRODUCT

DS31218 Rev. 2 – 2 2 of 4 www.diodes.com DZT5401 © Diodes Incorporated 00.20.425 5075100 125150P, POWER DISSIPATION (mW)DT , AMBIENT TEMPERATUR

Page 3 - (Top View)

DS31218 Rev. 2 – 2 3 of 4 www.diodes.com DZT5401 © Diodes Incorporated 0102030405060700.01 0.1 1 10 100V , REVERSE VOLTAGE (V)RFig. 7 Typical Ca

Page 4 - Suggested Pad Layout

DS31218 Rev. 2 – 2 4 of 4 www.diodes.com DZT5401 © Diodes Incorporated Suggested Pad Layout 3.32.31.21.61.66.4(Unit: mm) NEW PRODUCT

Comments to this Manuals

No comments

Diodes DZT5401 User Manual

Browse online or download User Manual for Hardware Diodes DZT5401. Diodes DZT5401 User Manual

Summary of Contents

Comments to this Manuals

Related products and manuals for Hardware Diodes DZT5401