Diodes DMS3016SSS User Manual download pdf

DMS3016SSS

Document number: DS32266 Rev. 3 - 2

1 of 6

www.diodes.com

September 2010

DMS3016SSS

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Features

• DIOFET utilizes a unique patented process to monolithically

integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

DS(ON)

- minimizes conduction losses

• Low V

- reducing the losses due to body diode conduction

• Low Q

- lower Q

of the integrated Schottky reduces body

diode switching losses

• Low gate capacitance (Q

) ratio – reduces risk of shoot-

through or cross conduction currents at high frequencies

• Avalanche rugged – I

and E

rated

• Lead Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.072 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

30 V

Gate-Source Voltage

GSS

±12 V

Continuous Drain Current (Note 3) V

= 4.5V

Steady

State

A = 25°C

A = 85°C

9.8

6.3

Pulsed Drain Current (Note 4)

90 A

Avalanche Current (Note 4) (Note 5)

13 A

Repetitive Avalanche Energy (Note 4) (Note 5) L = 0.3mH

25.4 mJ

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

1.54 W

Thermal Resistance, Junction to Ambient @T

= 25°C (Note 3) R

θJA

81 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

5. I

and E

rating are based on low frequency and duty cycles to keep T

= 25°C

Top View

Internal Schematic

1 2 3 4 5 6

Summary of Contents

Page 1 - DMS3016SSS

DMS3016SSS Document number: DS32266 Rev. 3 - 2 1 of 6 www.diodes.com September 2010© Diodes Incorporated DMS3016SSSNEW PRODUCT N-CHANNEL ENHANCEME

Page 2 - NEW PRODUCT

DMS3016SSS Document number: DS32266 Rev. 3 - 2 2 of 6 www.diodes.com September 2010© Diodes Incorporated DMS3016SSSNEW PRODUCT Electrical Cha

Page 3

DMS3016SSS Document number: DS32266 Rev. 3 - 2 3 of 6 www.diodes.com September 2010© Diodes Incorporated DMS3016SSSNEW PRODUCT 0102015 25 30Fig

Page 4

DMS3016SSS Document number: DS32266 Rev. 3 - 2 4 of 6 www.diodes.com September 2010© Diodes Incorporated DMS3016SSSNEW PRODUCT 0 5 10 15 20 25

Page 5 - Year: “10” = 2010

DMS3016SSS Document number: DS32266 Rev. 3 - 2 5 of 6 www.diodes.com September 2010© Diodes Incorporated DMS3016SSSNEW PRODUCT Ordering Informa

Page 6

DMS3016SSS Document number: DS32266 Rev. 3 - 2 6 of 6 www.diodes.com September 2010© Diodes Incorporated DMS3016SSSNEW PRODUCT IMPORTANT NOTI

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