DMP2069UFY4
Document number: DS31949 Rev. 2 - 2
1 of 6
www.diodes.com
November 2009
© Diodes Incorporated
DMP2069UFY4
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• 54mΩ @ V
GS
= -4.5V
• 69mΩ @ V
GS
= -2.5V
• 90mΩ @ V
GS
= -1.8V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 3kV
• "Green" Device, Halogen and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN2015H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-2.5
-2.2
A
Pulsed Drain Current (Note 4)
I
DM
-12 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
D
0.53 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C R
θJA
231 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
ESD PROTECTED TO 3kV
TOP VIEW
Internal Schematic
BOTTOM VIEW
D
S
G
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