Diodes DMG6301UDW User Manual

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DMG6301UDW
Document number: DS36288 Rev. 1 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG6301UDW
NEW PRODUCT
D1
S1
G1
Gate Protection
Diode
D2
S2
G2
Gate Protection
Diode
25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
25V
4 @ V
GS
= 4.5V
0.24A
5 @ V
GS
= 2.7V
0.22A
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMG6301UDW-7 Standard SOT363 3,000/Tape & Reel
DMG6301UDW-13 Standard SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT363
ESD HBM >6kV
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
Equivalent circuit
N5W= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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Summary of Contents

Page 1 - DMG6301UDW

DMG6301UDW Document number: DS36288 Rev. 1 - 2 1 of 6 www.diodes.com February 2014© Diodes Incorporated DMG6301UDWNEW PRODUCT D1S1G1Gate Protectio

Page 2

DMG6301UDW Document number: DS36288 Rev. 1 - 2 2 of 6 www.diodes.com February 2014© Diodes Incorporated DMG6301UDWNEW PRODUCT Maximum Ratings

Page 3 - NEW PRODUCT

DMG6301UDW Document number: DS36288 Rev. 1 - 2 3 of 6 www.diodes.com February 2014© Diodes Incorporated DMG6301UDWNEW PRODUCT V , DRAIN-SOURCE

Page 4

DMG6301UDW Document number: DS36288 Rev. 1 - 2 4 of 6 www.diodes.com February 2014© Diodes Incorporated DMG6301UDWNEW PRODUCT T , JUNCTION TEMPE

Page 5 - © Diodes Incorporated

DMG6301UDW Document number: DS36288 Rev. 1 - 2 5 of 6 www.diodes.com February 2014© Diodes Incorporated DMG6301UDWNEW PRODUCT Package Outline D

Page 6

DMG6301UDW Document number: DS36288 Rev. 1 - 2 6 of 6 www.diodes.com February 2014© Diodes Incorporated DMG6301UDWNEW PRODUCT IMPORTANT NOTICE

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