Diodes D5V0L2B3W User Manual Page 2

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D5V0L2B3W
Document number: DS35567 Rev. 4 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated
D5
V
0L2B3W
ADVANCE INFORMATION
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation
P
PP
84 W
8/20μs, Per Fig. 1
Peak Pulse Current
I
PP
6 A
8/20μs, Per Fig. 1
ESD Protection – Contact Discharge
V
ESD_Contac
t
±30 kV Standard IEC 61000-4-2
ESD Protection – Air Discharge
V
ESD_Ai
r
±30 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
625
°C/W
Operating Junction Temperature Range
T
J
-65 to +150
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage
V
RWM
-
- 5.0 V -
Breakdown Voltage
V
BR
6 7 8 V
I
R
= 1.0mA
Reverse Leakage Current (Note 6)
I
R
- 10 100 nA
V
RWM
= 5V
Clamping Voltage (Note 4) VCL
-
7.0 9.0 V
I
PP
= 1A, t
p
= 8/20μs
-
8.7 10.7 V
I
PP
= 3A, t
p
= 8/20μs
-
10.5 12.0 V
I
PP
= 5A, t
p
= 8/20μs
-
11.5 14.0 V
I
PP
= 6A, t
p
= 8/20μs
Differential Resistance
R
DIF
- 0.2 -
I
R
= 1.0A, t
p
= 8/20μs
Channel Input Capacitance
C
T
- 15 20 pF
V
IN
= 0 V, f = 1MHz
(Channel to Pin 3)
Notes: 4. Measured from pin 1 to 3 or pin 2 to 3; Non-repetitive current pulse per Fig. 1.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
t, TIME ( s)
Fig. 1 Typical 8 x 20µs Pulse Waveform
μ
20 40
60
100
50
0
I , PEAK PULSE CURRENT (%I )
PppP
0
25
25 50
75 100 125
150
P
EAK
P
U
LSE DE
R
A
T
IN
G
IN %
O
F
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
Fig. 2 Pulse Derating Curve
A
50
75
0
100
175 200
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