Diodes 2DB1694 User Manual download pdf

2DB1694

Document number: DS31640 Rev. 2 - 2

1 of 4

www.diodes.com

December 2008

2DB1694

NEW PRODUCT

LOW V

CE(SAT)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage

• Ideal for Low Power Amplification and Switching

• Complementary NPN Type Available (2DD2656)

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-30 V

Collector-Emitter Voltage

CEO

-30 V

Emitter-Base Voltage

EBO

-6 V

Collector Current - Continuous

-1 A

Peak Pulse Collector Current

-2 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

= 25°C P

300 mW

Thermal Resistance, Junction to Ambient (Note 3) @ T

= 25°C

417

°C/W

Power Dissipation (Note 4) @ T

= 25°C P

500 mW

Thermal Resistance, Junction to Ambient (Note 4) @ T

= 25°C

250

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(

)

CBO

-30

⎯ ⎯

= -10μA, I

= 0

Collector-Emitter Breakdown Voltage (Note 5)

(

)

CEO

-30

⎯ ⎯

= -1mA, I

= 0

Emitter-Base Breakdown Voltage

(

)

EBO

-6

⎯ ⎯

= -10μA, I

= 0

Collector Cut-Off Current

CBO

⎯ ⎯

-0.1

μA

= -30V, I

= 0

Emitter Cut-Off Current

EBO

⎯ ⎯

-0.1

μA

= -6V, I

= 0

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

(

SAT

)

⎯

-180 -380 mV

= -500mA, I

= -25mA

DC Current Gain

270

⎯

680

⎯

= -2V, I

= -100mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

obo

⎯

= -10V, I

= 0,

f = 1MHz

Current Gain-Bandwidth Product

⎯

300

⎯

MHz

= -2V, I

= -100mA,

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch

copper pad layout.

5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Top View

Device Schematic

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1 2 3 4

Summary of Contents

Page 1

2DB1694 Document number: DS31640 Rev. 2 - 2 1 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1694NEW PRODUCT LOW VCE(SAT) PNP SURFACE

Page 2 - NEW PRODUCT

2DB1694 Document number: DS31640 Rev. 2 - 2 2 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1694NEW PRODUCT 00.10.2255075 100 125150

2DB1694 Document number: DS31640 Rev. 2 - 2 3 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1694NEW PRODUCT 0.1 1 10 100V , REVERSE

Page 4 - Suggested Pad Layout

2DB1694 Document number: DS31640 Rev. 2 - 2 4 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1694NEW PRODUCT Suggested Pad Layout

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