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Diodes FCX705 User Manual

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SEMICONDUCTORS
SUMMARY
V
CEO
=120V; V
CE(sat)
= 1.3V; I
C
= -1A
DESCRIPTION
This new PNP Darlington transistor provides users with very efficient performance
combining low V
CE (sat)
and very high H
FE
to give extremely low on state losses at
120V operation. This makes it deal for use in a variety of efficient driving functions
including motors, lamps relays and solenoids and will also benefit circuits
requiring high output current switching.
FEATURES
•
Low Saturation Voltage
•
H
FE
min 3K @ -1A
•
I
C
= -2A Continuous
•
SOT89 package with Ptot - 1W
•
Specification is also available in Eline and SOT223
package outlines
APPLICATIONS
•
Various driving functions
- Lamps
- Motors
- Relays and solenoids
•
High output current switches
DEVICE MARKING
705
FCX705
ISSUE 4 - DECEMBER 2002
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
1
S
O
T
8
9
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
FCX705TA 7’‘ 12mm 1000 units
ORDERING INFORMATION
Top View
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1 2 3 4 5

Summary of Contents

Page 1 - SEMICONDUCTORS

SEMICONDUCTORSSUMMARYVCEO=120V; VCE(sat)= 1.3V; IC= -1ADESCRIPTIONThis new PNP Darlington transistor provides users with very efficient performancecom

Page 2 - ABSOLUTE MAXIMUM RATINGS

FCX705SEMICONDUCTORSISSUE 4 - DECEMBER 20022PARAMETER SYMBOL VALUE UNITJunction to Ambient (a) RθJA125 °C/WJunction to Ambient (b) RθJA45 °C/WTHERMAL

Page 3 - ISSUE 4 - DECEMBER 2002

FCX705SEMICONDUCTORSISSUE 4 - DECEMBER 20023PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base BreakdownVoltageV(BR)CBO-140 V IC= -100␮ACo

Page 4 - PNP CHARACTERISTICS

FCX705SEMICONDUCTORSISSUE 4 - DECEMBER 20024PNP CHARACTERISTICS

Page 5 - PACKAGE DIMENSIONS

FCX705SEMICONDUCTORSISSUE 4 - DECEMBER 2002EuropeZetex plcFields New RoadChaddertonOldham, OL9 8NPUnited KingdomTelephone (44) 161 622 4444Fax: (44) 1

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