Diodes FCX658A User Manual download pdf

SOT89

SOT89 NPN SILICON PLANAR

MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ISSUE 1 – NOVEMBER 2000

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

tot

=1 Watt

* Optimised h

characterised upto 200mA

APPLICATIONS

* Telephone dialler circuits

* Hook switches for modems

* Predrivers within HID lamp ballasts

* (SLIC) Subscriber Line Interface Cards

Partmarking Detail - 65A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

400 V

Collector-Emitter Voltage V

CEO

400 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

Continuous Collector Current I

500 mA

Power Dissipation at T

amb

=25°C

derate above 25°C

tot

5.7

mW/ °C

Operating and Storage Temperature Range T

stg

-55 to +150 °C

FCX658A

1 2 3 4

Summary of Contents

Page 1 - SOT89 NPN SILICON PLANAR

SOT89SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORISSUE 1 – NOVEMBER 2000FEATURES* 400 Volt VCEO* 0.5 Amp continuous current*Ptot=1 Wa

Page 2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-BaseBreakdown VoltageV(B

Page 3 - TYPICAL CHARACTERISTICS

0.01 0.1 201101.00.80.60.400.21.61.41.20.01 0.1 201101.00.80.60.400.21.61.41.20.01 0.1 201101.00.80.60.400.21.61.41.2TYPICAL CHARACTERISTICS VCE(sat)v

Page 4 - THERMAL CHARACTERISTICS

FCX658THERMAL CHARACTERISTICSPARAMETER SYMBOL MAX. UNITThermal Resistance:Junction to Ambient1Junction to CaseRth(j-amb)1Rth(j-case)12510°C/W°C/WP - P

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Diodes FCX658A User Manual

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