
FCX605ISSUE 2 - SEPTEMBER 2005120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTORSUMMARYDESCRIPTIONThis new NPN Darlington transistor provides users w
ISSUE 2 - SEPTEMBER 2005FCX605THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a) RθJA125 °C/WJunction to Ambient (b) RθJA45 °C/WNOTE
ISSUE 2 - SEPTEMBER 2005FCX605ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Colle
ISSUE 2 - SEPTEMBER 2005FCX605NPN TYPICAL CHARACTERISTICS4 VCE(sat)v IC IC - Collector Current (Amps) VCE(sat) - (Volts)IC - Collector Current (Amps)
ISSUE 2 - SEPTEMBER 2005FCX605PACKAGE DIMENSIONSPAD LAYOUT DETAILS51.2 1.0 1.23.21.54.02.4SOT89 pattern.EuropeZetex GmbHStreitfeldstraße 19D-81673 Mün
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