Diodes DMN5L06DMK User Manual download pdf

DMN5L06DMK

Document number: DS30927 Rev. 4 - 2

1 of 4

www.diodes.com

September 2007

DMN5L06DM

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage (1.0V max)

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected up to 2kV

• "Green" Device (Note 4)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.015 grams (approximate)

SOT-26

ESD protected up 2kV

TOP VIEW

BOTTOM VIEW

Maximum Ratings @T

= 25°C unless otherwise specified

Internal Schematic

TOP VIEW

Characteristic Symbol Value Unit

Drain Source Voltage

DSS

50 V

Gate-Source Voltage

GSS

±20

Drain Current (Note 1) Continuous

Pulsed (Note 3)

305

800

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

400 mW

Thermal Resistance, Junction to Ambient

313

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 0V, I

= 10μA

Zero Gate Voltage Drain Current @ T

= 25°C I

DSS

⎯ ⎯

60 nA

= 50V, V

= 0V

Gate-Body Leakage

GSS

⎯ ⎯

500

μA

= ±12V, V

= 0V

= ±10V, V

= 0V

= ±5V, V

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

GS(th)

0.49

⎯

1.0 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)

⎯

3.0

2.5

2.0

= 1.8V, I

= 50mA

= 2.5V, I

= 50mA

= 5.0V, I

= 50mA

On-State Drain Current

D(ON)

0.5 1.4

⎯

= 10V, V

= 7.5V

Forward Transconductance

200

⎯ ⎯

=10V, I

= 0.2A

Source-Drain Diode Forward Voltage

0.5

⎯

1.4 V

= 0V, I

= 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯ ⎯

50 pF

Output Capacitance

oss

⎯ ⎯

25 pF

Reverse Transfer Capacitance

rss

⎯ ⎯

5.0 pF

= 25V, V

= 0V

f = 1.0MHz

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 2 3 4

Summary of Contents

Page 1 - DMN5L06DMK

DMN5L06DMK Document number: DS30927 Rev. 4 - 2 1 of 4 www.diodes.com September 2007© Diodes Incorporated DMN5L06DMKNEW PRODUCT DUAL N-CHANNEL ENHA

Page 2 - NEW PRODUCT

DMN5L06DMK V , DRAIN-SOURCE VOLTAGE (V)Fig. 1 Typical Output CharacteristicsDS V , GATE-SOURCE VOLTAGE (V)Fig. 2 Typical Transfer Characteristic

Page 3

DMN5L06DMK T , AMBIENT TEMPERATURE ( C)Fig. 7 A°Static Drain-Source On-State Resistance vs. Ambient Temperature I , REVERSE DRAIN CURRENT (A)DR I

Page 4 - DAB YM

DMN5L06DMK Ordering Information (Note 6) Part Number Case Packaging DMN5L06DMK-7 SOT-26 3000/Tape & Reel Notes: 6. For packaging details,

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